DT430 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

<^>£.mi-L,onauctoi L/^ioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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FAX: [phone]
Silicon NPN Darlington Power Transistor
DT430
DESCRIPTION
: V(BR)CEO= SOOV(Min)
• High DC Current Gain
: hFE= 2000(Min.)@ lc= 4A
• Low Collector Saturation Voltage
: VCE(satr 3.0V(Max.)@ lc= 6A
APPLICATIONS
• Switching for dynamotor excitation
• General purpose power amplifier
1i
BO—^\f^{S^}
oc
J^T
L
1_{2 3}
PIN 1 BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
h^ p ^.
C*-
UL,*"Y"*;;^F~1";
tuQif r~~^\p H^t
ABSOLUTE MAXIMUM RATINGS(T,=25T )
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
100
W
150
°C
-55-150 °c
r^{" H ;}
-H
mm
DIM MIH MAX
A 19.90 20.10
R _{15 50 15 70}
c 4,70 4.90
D 0,90 1,10
F 1.90 2.10
F 3.40 3.60
G 2.90 3,10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
u 5.90 6,10
Y 9.90 1 10.10
^ fclj fc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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