D44TD3 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Collector-Emitter
VcEO(SUS) _{Sustaining Voltage}
D44TD3
D44TD4 IC=0.1A;IB=0
D44TD5
VcE(sat) ^{Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4A}
VBE(sat) ^{Base-Emitter Saturation Voltage}
lc= 2A; IB= 0.4A
Collector
ICEV
Cutoff Current
D44TD3 VcE=400V;VBE(off)=1.5V
D44TD4 VCE= 500V; VBE(o(f)= 1.5V
D44TD5 _{VCE= 600V;VBE(0ff)= 1.5V}
IEBO
Emitter Cutoff Current
VEB= 6V; lc=0
MFE
DC Current Gain
lc=2A; VCE=3V
D44TD3/4/5
MIN MAX UNIT
300
350
V
400
1.0
V
1.5
V
0.1
0.1 mA
0.1
1.0 mA
5