D44TD3 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

, Dna.
t-f
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
D44TD3/4/5
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(SUS)= SOOV(Min)- D44TD3
= 350V(Min)- D44TD4
= 400V(Min)- D44TD5
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for switching regulators, high resolution deflection
circuits, inverters and motor drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
Collector-Emitter
VCEV
Voltage
D44TD3
400
500
V
D44TD5
600
VCEO
Collector-Emitter
Voltage
D44TD3
300
350
V
D44TD5
400
VEBO ^{Emitter-Base Voltage}
5
V
Ic
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ ^T1 C ^{— 9}-^{^}"^°P<-
Tj
Junction Temperature
Tstg
Storage Temperature Range
8
A
50
W
150
-C
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.56 'CM/
i- ! / » % •
1^ 1
t
1I I
12 3
^²
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
^> ^{,.,„. Q ^}
U-^M
F
1
€H:
V
A
t
K
JOWS ..
HP
5O&_I'<
t
*T- G [*-
i
C
4
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
r> _{0.70 0.90}
F 3.40 3.60
G 4.98 5.18
ht 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
H 2.50 2.70
S 1.29 _1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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