BUZ72A Datasheet, PDF (2/4 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

BUZ 72A
Electrical Characteristics, at 7] = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, /D = 0.25 mA, 7] = 25 "C
Gate threshold voltage
VGS=VDS,ID= 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, 7] = 25 °C
VDS = 10°v- ^GS = °v> T\ 125 °c
Gate-source leakage current
VQQ = 20 V, VDS = 0 V
Drain-Source on-resistance
l/GS = 10V, /D = 6A
Symbol
Values
Unit
min.
typ.
max.
^(BRJDSS
100
-
^GS^h)
2.1
3
'DSS
,
0.1
-
10
'GSS
-
10
RDS(on)
-
0.2
V
-
4
MA
1
100
nA
100
a
0.25