BUZ72A Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

^E-mi-dondiLctoi \J^ioaacti, Ona.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
• N channel
• Enhancement mode
• Avalanche-rated
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BUZ 72A
Pin1
Pin 2
D
Pin 3
Type
BUZ 72 A
YDS
fc
100V
9A
RDS(on)
0.25 Q
Package
TO-220 AB
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
7-c = 25 'C
Pulsed drain current
Tc = 25 °C
Avalanche current, limited by 7]max
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
/D = 10A, VDO = 25 V, RQS = 25 Q
L = 885 uH, 7] = 25 °C
ID
'Dpuls
/AR
£AR
£AS
A
9
36
10
7.9
mj
59
Gate source voltage
Power dissipation
rc = 25 °c
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
VGS
Plot
1
Tstg
RthJC
RthJA
±20
V
W
40
-55... + 150 °C
-55... + 150
<3.1
K/W
75
E
IEC climatic category, DIN IEC 68-1
55/150/56
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