BUK553-60A Datasheet, PDF (2/2 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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PowerMOS transistor
Logic level FET
BUK553-60A/B
STATIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
V_II1DGSSS(TO)
IDSS
IGSS
F>DS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Jj = 25 °C
VDS = 60V;VGS = O V ; T ^ = 1 2 5 ° C
VGS = ±15V;VDS = OV
VGS = 5 V;
BUK553-60A
ID = 10 A
BUK553-60B
MIN.
60
1.0
-
-
-
-
-
TYP.
.
1.5
1
0.1
10
0.075
0.08
MAX.
-
2.0
10
1.0
100
0.085
0.10
UNIT
V
V
HA
mA
nA
£1
ft
DYNAMIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
9.S
Forward transcenductance
Cjss
Input capacitance
cC0SS
rss
Output capacitance
Feedback capacitance
^d on
Turn-on delay time
tr
Turn-on rise time
tdoff
Turn-off delay time
t,
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25V;ID = 1QA
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
Ves = 5 V; RGS = 50 Q;
Rgen = 50 ft
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN. TYP. MAX. UNIT
7
10
-
S
700 825 PF
-
240 350
130 160
P^PEF
20 30 ns
-
95 120 ns
80 110 ns
65
85
ns
3.5
nH
4.5
-
nH
-
7.5
nH
Quality Semi-Conductors