BU500 Datasheet, PDF (2/2 Pages) Motorola, Inc – NPN SILICON POWER METAL TRANSISTOR

ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted)
I Symbol | Mln.
Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Suttaining Voltage
(lc = 600 mAdc, IB - 01 L = 10 mH
Collector Cutoff Current at Revme Bias:
(VCE = 1000V. le = 0)
(VCE = iioo v, IE = 0)
Collector-Emitter Cutoff Current
(VCE = isoo v, VBE - -2 v)
Emitter-Base Reverse Voltage
(IE = 100mA)
Emitter Cutoff Current
(VEB = 4 V)
VCEOduj)
700
ICBO
'CEX
VEBO
5
IEBO
Vdc
mAdc
0,02
1.0
mAdc
1.0
V
mAdc
10
ON CHARACTERISTICS (II
DC Current Gain
(lc=4.6Adc. VCE = 6V>
Collector-Emitter Seturation Voltage
(IC=4-6Adc, IB =2 A)
Base-Emitter On Voltage
(lc=4.6Adc.VCE =2AI
hFE
3.0
vCE(set)
VBE(on)
~
Vdc
1.0
Vdc
1,3
SWITCHING CHARACTERISTICS (Resistive Load)
Storage Time
Fell Time
(VCc = 100Vdc, IC=4.SA.
lB1-1.5A.IB2 =1.5 A)
(1) Pulse Test: Pude Width = 300«&, Duty Cycle < 2°/o
-
Ut
's
-
1.2
tf
-
1.0