BU500 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON POWER METAL TRANSISTOR

j.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BU500
HC>RIZONTAL DEFLECTION TRANSISTOR
. . . ipceif Ically designed for use In large
scr sen color deflection circuits
• VC[:y= 1500V;
vet:0(sus) • 700 V (mln.)
• Lowi saturation:
VCE=(sat) = 1 V (max.) @ Ic = 4.6 Adc
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (VBE = -2.0 Vt
Collector-Current — continuous
— peak low< 300 jUsI
Base-Current continuous
ToMI Power Dissipation ^TQ = 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
vCiO(sus)
VCBO
7°0
'BOO
VSBO
Vcgx
l£
ICM
IB
PD
Tj, Tstg
a
' 500
6
16
<
76
-65 to 1BO
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Wain
t
Symbol
0jc
Max.
1 .66
Unit
°C/W
FIGURE 1 - POWER DERATING
1.B
\
1
° DJ
I"
1,
21
V- !-—t-
-\ 1
N !j
x_\ i _i i _::
!\
!\ i
U
75
100 us
1H
ITS 1W
TC. CASE tEMrEHATURE ('ct
6 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
1EOO VOLTS
76 WATTS
^
1 „__*, , '
I-f-^rP^I
n/-t- ]
1— J --1
]^j|p5
10IES
1 LlTl Ii it*Tmf. n *nt mn OA.IKU
J
roSITlONAlTOHIIANCIfOrt
KOUrlTchilhOLt 0
* [Inioooueh v0]
4 QWENSIONIAKOTOLtHANCESnfl
ANSI VUi, 1111
HILLt ItlFS M[HES
K l l n l l i it tJo-i'i.'^'
|_ _it i FIM 0>ii
V U! "» 8<M OMI
"" TO-3
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