BFX30 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP switching transistor

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0;VCB = -65V
|E = 0;VCB = -50V
- - -500 nA
- - -50 nA
|E = 0;VCB = - 5 0 V ; T j = 1 0 0 ° C
- - -2 HA
IEBO
hFE
VcEsat
VBEsat
Co
Ce
fT
emitter cut-off current
IC = 0 ; V E B = - 5 V
--
IC = 0 ; V E B = - 3 V
--
DC current gain
lc = -1 mA; VCE = -400 mV
40 -
lc = -10 mA; VCE = -400 mV
50 90
lc = -50 mA; VCE = -400 mV
20 -
lc = -150 mA; VCE - -400 mV
10 -
collector-emitter saturation voltage lc = -150mA; lB = -15u.A
--
base-emitter saturation voltage lc = -30 mA; IB = -1mA
--
lc = -150mA; !B = -15mA
--
collector capacitance
lE = ie = 0; VcB = - 1 0 V ; f = 1 MHz
-6
emitter capacitance
lc = ic = 0; VEB = -2 V; f = 1 MHz
-
18
transition frequency
lc = -50 mA; VCE = -10 V; f = 100 MHz 100 -
-500 nA
-100 nA
-
200
-
-
-400 mV
-900 mV
-1.3 V
-
pF
-
pF
-
MHz
Switching Times (between 10% and 90% levels); see Fig.2
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
Icon = -150 mA; !Bon = -15 mA;
lBoff = 15 mA
- - 45 ns
-
-
15 ns
- - 35 ns
- - 300 ns
- - 250 ns
- - 50 ns
- seating plane
i_w@[A@B®]—|
scale
DIMENSIONS (mm are the original dimensions)
;
UNIT A
a b ₀ Di _j
k
LW a
j
mm
6.60
6,35
'
5.08
048 939
041 9,08
833 085 0,95
818 0,75 0.75
14.2
127
0.2
i
i
4511 ,'
i
10 mm