BFX30 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FEATURES
• High current (max.600 mA)
• Lowvoltage (max. 65V).
APPLICATIONS
• Switching applications.
DESCRIPTION
PNP transistor in a TO-39 metal package.
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BFX30
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
Ic
Plot
hFE
fl
toff
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
CONDITIONS
MIN. TYP. MAX.
open emitter
-
-
-65
open base
-
-
-65
-
-
-600
Tamb<25"C
-
-
600
lc = -10 mA;VCE = -400 mV
50 90 200
lc = -so mA; VCE = -10 V; f = 100 MHz
100 -
-
Icon = -150 mA; I BOP =-15 mA; lBoff = 10 mA -
-
300
UNIT
V
V
mA
mW
MHz
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
lc
ICM
IBM
Plot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb < 25 "C
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-65
-65
-5
-600
-600
-200
600
+150
200
+150
UNIT
V
V
V
mA
mA
mA
mW
C
JC
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rfh j-a
thermal resistance from junction to ambient in free air
Quality Semi-Conductors
VALUE
300
UNIT
K/W