BFX29 Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

BFX29
ELECTRICAL CHARACTERISTICS (T, = 25°C unless otherwise stated)
IEBO
ICBO
FE
CE(sat)
VeE(sat)
Ctc
Cte
fT
Parameter
Test Conditions
VEB = 5.0V
lc=0
Emitter Cut-off Current
Collector Cut-off Current
VEB = 3V
VCB =60V
VCB =50V
lc = 0
IE = O
IE = 0
Tj=100°C
VCE=10V
lc = 0.1mA
VCE = 10V
lc= 1mA
DC Current Gain
VCE = 10V
VCE=10V
lc= 10mA
lc = 50mA
VCE = 10V
lc= 150mA
Collector - Emitter
saturation Voltage
lc = 150mA IB= 15mA
lc = 30mA
Base - Emitter Saturation Voltage
lc = 150mA
IB=1.0mA
I B = 15mA
Collector Capactitance
VCB = 10V
lE = le=0
f=1.0MHz
Emitter Capactitance
VEB = 2.0V
lc=ic=0
f=1.0MHz
Transistion Frequency
VCE = 10V
f= 100MHz
lc = 50mA
Tamb=25°C
THERMAL CHARACTERISTICS
I Reth(i-amb) Thermal Resistance Junction to Ambient
Min.
20
40
50
50
40
Typ.
30
1.0
1.0
0.5
0.03
90
105
125
125
90
Max. Unit
500
nA
100
500
nA
50
2.0 uA
—
0.15
0.40 V
0.77
0.90
V
1.05
1.30
6
12
PF
18
30
100
360
MHz
292