BFX29 Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR

<££ml-Condu.eioi ZPioduati, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BFX29
TELEPHONE: [phone]
[phone]
FAX: [phone]
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
APPLICATIONS
• General Purpose Industrial Applications
0.71_|_q.02Sj__
0.5E"<o~H5f)
2.54
(0 100,
TO39 PACKAGE
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
"c
Collector- Base Voltage
Collector- Emitter Voltage
Emitter - Base Voltage
Collector Current Continuous
60V
60V
5V
600mA
'CM
Collector Current Peak
600mA
'EM
Emitter Current Peak
600mA
Ptot
Total Power Dissipation Tamb < 25°C
Tstg
Storage Temperature
TJ
Operating Junction Temperature
600 mW
-65 to 200°C
200°C
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftimished by NJ Semi-Conducton is believed to be both accurate and reliable at the time of going to
press. HoweverNJ Semi-Conductors assumes no responsibility for any errorsor omissions discovered in its use. NJ
.Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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