BFS540 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Silicon NPN RF Transistor
BFS540
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IcBO
Collector Cutoff Current
VCB= 8V; IE= 0
hFE
DC Current Gain
lc= 40mA ; VCE= 8V
ft
Current-Gain—Bandwidth Product lc= 40mA ; VCE= 8V; f= 1GHz
COB
Output Capacitance
lE=0;VCB=8V;f=1MHz
Cre
Feedback Capacitance
1 S2ie I 2 ^{Insertion Power Gain}
NF
Noise Figure
lc=0;VCB=8V;f=1MHz
lc= 40mA ; VCE= 8V; f= 900MHz
lc= 10mA ; VCE= 8V; f= 900MHz
NF
Noise Figure
lc= 40mA ; VCE= 8V; f= 900MHz
NF
Noise Figure
lo=10mA; VCE= 8V; f= 2GHz
0.05 uA
60
250
g
GHz
0.9
PF
0.6
PF
12
13
dB
1.3 1.8 dB
1.9 2.4 dB
2.1
dB
40C
=tot
\
30C
\
:oc
\E 1
10C
\V
5C
1DD
153Tc.:°Ci2DO
Power derating curve
2CO
hFE
/CE = 9 V: T = 25
"5D
••CD
1CT2
10-'
1
"C >
DC current gain as a function of collector
current