BFS540 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
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Silicon NPN RF Transistor
BFS540
DESCRIPTION
• Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz
• High Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1 GHz
APPLICATIONS
• Designed for RF wideband amplifier applications such as
satellite TV systems and RF portable communication
equipment with signal frequencies up to 2 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
lc
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
120
mA
0.5
W
175
r
Tstg
Storage Temperature Range
-65-150
'C
SOT-323 package
T l l:Base
j_a ^cI 2-. Emitter
3; Collector
mm
DIM
WIN
MAX
A 0. 30 o. so
B 1.15
1.35
C' 2.00 2. ;o
D
0.65
H 1.80
120
K 0.80
1. 00
M _0.10
0. 25
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