BFS22A Datasheet, PDF (2/3 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F. POWER TRANSISTOR

V.H.F. power transistor
CHARACTERISTICS
Tj = 25°C unless otherwise specified
Collector cut-off current
IB a 0; VCE = 14V
Breakdown voltages
Collector -base voltage
open emitter, Ic = 1 niA
Collector -emitter voltage
open base, Ic = 10 mA
Emitter -base voltage
open collector, IE = 1 niA
Transient energy
L = 25 mH; f = 50 Hz
open base
D. C. current gain
Ic = 500 mA; VCE = 5 V
Transition frequency
IC = 350 mA; VCE = 10 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VcB = 15 V
Feedback capacitance at f = 1 MHz
1C = 50 mA; VCE - IS V
BFS22A
ICEO
5 mA
V(BR)CBO >
V(BR)CEO >
V(BR)EBO >
36 V
18 V
4V
E
0.5 mS
E
0.5 mS
fT
-Cre
typ. 700 MHz
typ. 15 pF
<
20 pF
typ. 11 pF