BFS22A Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – V.H.F. POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: [phone]
[phone]
FAX: [phone]
JL ^BFS22A
V.H.F. POWER TRANSISTOR
N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and
military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran-
sistor Is tested under severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a TO-39 metal envelope with the collector connected to the case.
QUICK REFERENCE DATA
R.F. performance up to Tmt, » 25 °C in an unneutralized common-emitter class-B circuit
mode of operation _VCE
V
f
MHz
PwL
GP
dB
i?
%
Z|
SI
VI
mS
c.w.
13,5
175
4
> 8 > 60 3,9 + J2,2
37 - j22
c.w.
12,5
175
4 typ.8 typ. 60
—
—
MECHANICAL DATA
Fig.1 TO-39/1; collector connected to case.
Dimensions in mm
-»H
\e
Maximum lead diameter is guaranteed only for 12,7 mm.
Accessories: 56245 (distance disc).
•«.,« -
mm
.Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice
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