BFR96 Datasheet, PDF (2/3 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tease = 25°C)
STATIC
[Off]
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 1.0mAdc, IB = 0)
Collector-Base Breakdown Voltage
(1C = 0.1 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, 1C = 0)
Collector Cutoff Current
(VCB = 10Vdc, VBE = OVdc)
DC Current Gain
(1C = 50 mAdc, VCE = 10 Vdc)
DYNAMIC
Symbol
Test Conditions
Ftau
CCB
Current-Gain - Bandwidth Product
(1C = 50 mA, VCE = 10 Vdc, f = 0.5 GHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 .0 MHz)
BFR96
Min.
15
20
3.0
-
Value
Typ.
-
-
-
-
Max.
-
-
-
100
30
-
200
Unit
Vdc
Vdc
Vdc
nA
-
Min.
-
-
Value
Typ.
5.0
2.6
Max.
-
3.2
Unit
GHz
PF