BFR96 Datasheet, PDF (1/3 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

j.
ts
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA
• Low Noise Figure - NF = 2.4 dB (typ) @ f = 0.5 GHz
• High Power Gain - Gmax = 14.5dB (typ) @ f = 0.5 GHz
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FAX: [phone]
BFR96
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tease = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
Vcso
Collector-Base Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current
Thermal Data
p
D
Total Device Dissipation @ TC = 100°C
Derate above 100°C
Value
15
20
3.0
100
500
10
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/°C
N.I .Semi-C'miduetors reserves the right lo change test conditions, parameter limits and package dimensions without notice
Information t'unrnhed by NJ Stmi-t unduclort isbelieved to he both accurate ami reliable .it the lime of going lo press. However \
Semi -C oiiductors assumes nn responsibility tor my errors or omissions Jiicuvcred in its use NJ Scim-4. niiJin.li rs ciitn
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