BFR94A Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN 3.5 GHz wideband transistor

CHARACTERISTICS
Tj = 25 "C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off currant
hfE
DC current gain
fT
transition frequency
C0
collector capacitance
C.
emitter capacitance
c.
feedback capacitance
Co
collector-stud capacitance
GUM
maximum unilateral power gain
(note 1)
F
noise figure
dnn
intermodulatlon distortion
4
second order intermodulatlon
distortion
Vo
output voltage
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0;VC8 = 20V
I0 = 50 mA; VCE = 20 V
lc=150mA;VOE =20V
-
-
30 -
30 ^_.
50 _MA
-
-
lc - 90 mA; VeE = 20 V; f - 500 MH-z 3.5 -
GHz
lc=150mA;VOE = 20V;
f- 500 MHz
—
3.5 —
GHz
IE = I. - 0; VCB = 20 V;f = 1 MHz -
3.5 -
PF
I0 = Ig - °; VEB - 0.6 V; f - 1 MHz -
12 -
PF
lc - 10 mA; VOE = 20 V; f - 1 MHz -
1.3 -
PF
f = 1 MHz
-
2
-
PF
lc = 90 mA; VOE = 20 V;
f=500MHz;Tjmb=25°C
—
13.5 —
dB
lc = 90 mA; VOE - 20 V;
f= 200 MHz; !„„„=. 25 °C
—
8
10 dB
lc = 90 mA; VOE = 20 V;
f»500MHz;TBT,b = 25°C
note 2
note 3
—
5
—
dB
-
-63 -
dB
—
—
-56 dB
see Fig. 2 and note 4
-
700 -
mV
Notes
1. GUM is ths maximum unilateral power gain, assuming S12 is zero and GUM = 10 log• _{- foi,!' > (i -}
dB.
2. I0 = 90 mA; VCE = 20 V; RL » 75 fl;
Vp = V0 = 60 dBmV at fp - 1 96.25 MHz;
V, = V0 -6 dB at f, = 203.25 MHz;
Vr = V0 -6 dB at f, * 205.25 MHz;
measured at f(pH^ = 194.25 MHz.
3. lc = 90 mA; VCB = 20 V;
fp = 66 MHz; fq = 144 MHz; f,, 4- f, = 210 MHz; Vo » 48 dBmV.
4. d^ = -60 dB (DIN 45004B); lc - 90 mA; VCE - 20 V; RL « 75 O; T,^ = 25 °C;
Vp = V0 at dh, * -60 dB;fp = 495.25 MHz;
V, - V0 -« dB; f, - 503.25 MHz;
Vr - V0 -6 dB; f, = 505.25 MHz;
measured at fIMUt = 493.25 MHz.