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BFR94A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 3.5 GHz wideband transistor
tSsmi-Gonau.cko'i iPioaucti, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN 3.5 GHz wideband transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 378-8960
BFR94A
DESCRIPTION
NPN resistance-stabilized transistor
in a SOT122E capstan envelope.
It features extremely low cross
modulation, intermodulation and
second order intermodulation
distortion. Due to Its high transition
frequency, it has a high power gain,
in conjunction with good wideband
properties, and low noise up to high
frequencies.
It is primarily intended for CATV and
MATV applications.
The BFR94A is a replacement for
the BFH94. The SOT122E footprint
is similar to that of the SOT48, used
fortheBFR94.
PINNING
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Fig,1 SOT122E,
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VC60
collector-base voltage
collector-emitter voltage
DC collector current
'o
P»
total power dissipation
fr
transition frequency
F
noise figure
cL
intermodulation distortion
<**
second order intermodulation
distortion
CONDfTIONS
TYP.
open emitter
-
open base
-
-
uptoTe=145'5C;f>l MHz
-
lc = 90mA; VC6 - 20 V; f - 500 MHz; 3.5
^ = 25 "C
I0 = 90 mA: VCE = 20 V; f = 200MHz; 8
T^,.2B-C
lc = 90 mA; Vcj = 20 V;
-63
V0 = 60 dBmV; f^,, = 194.25 MHz
lc = 90 mA;VCE = 20V;
—
V0 m 48 dBmV; fp + fq = 210 MHz
MAX.
30
25
150
3.S
-
10
—
-56
UNIT
V
V
mA
W
GHz
dB
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VOEO
VCER
VEBO
lc
ICM
P«
T-,
T.
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
RBE- 100 £i
open collector
f > 1 MHz
u p t o T c = 1 4 5 ° C ; f > 1 MHz
THERMAL RESISTANCE
SYMBOL
PARAMETER
'"'ifll-C
thermal resistancefrom junction to case
MIN.
_
-
_
-
-
-
-
-65
-
MAX. UNIT
30
V
25
V
35 I V
3
V
150 mA
300 mA
3.5
W
200
200
DC
r^r-
THERMAL RESISTANCE
15K/W
Quality Semi-Conductors