BFR93AW Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Silicon NPN RF Transistor
BFR93AW
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 5V; IE= 0
0.05 u A
hFE
DC Current Gain
lc= 30mA ; VCE= 5V
40
fr
Current-Gain—Bandwidth Product lc= 30mA ; VCE= 5V; f= 500MHz
4
5
GHz
COB
Output Capacitance
lE=0;VCB=5V;f=1MHz
0.7
PF
Cre
Feedback Frequency
NF
Noise Figure
|E=0;VCB=5V;f=1MHz
lc=5mA;VCE=8V;f=1GHz
0.6
PF
1.5
dB
NF
Noise Figure
lc= 5mA ; VCE= 8V; f= 2GHz
2.1
dB
400
ptot
(mW)
300
200
100
50
100
150 Q 200
Power derating curve TS ( C)
5V
hFE
80
40
0
10
20 ic (mA) 30
DC current gain as a function of collector
current; typical values