BFR93AW Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

I
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (inc.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BFR93AW
DESCRIPTION
• High Power Gain
• High Current Gain Bandwidth Product
• Low Noise Figure
SOT-323 package
APPLICATIONS
• Designed for use in RF amplifiers .mixers and oscillators
with signal frequencies up to 1 GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
H , h-A
•Mil
Marking
U' j U
I
^.D*
| _ G —^
t
t I l:Base
3 c -. ,_ .
i i -I: Emitter
_L 3: Collector
VCBO ^{Collector-Base Voltage}
15
V
/
\p
rn / ,_MK IT
Tl
L1
I1
11
—*- 1 1 |
ML
4 ^I—
VCEO ^{Collector-Emitter Voltage}
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
12
V
2
V
35
mA
0.3
W
175
'C
-65~150
'C
mm
DIM
WIN
MAX
A
0. 30
0. 50
B 1, 15
i. 35
C 2.00
-. -0
I)
0. 65
H 1.80 2.20
K 0. 80 i. 00
M 0. 10
0. 25
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no1 responsibility for any errors or omissions discovered in its use.
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