BFR93A Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

Silicon NPN RF Transistor
BFR93A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 5V; IE= 0
0.05 uA
hFE
DC Current Gain
lc= 30mA ; VCE= 5V
40
ft
Current-Gain—Bandwidth Product lc= 30mA ; VCE= 5V; f= 500MHz
4.5
6
GHz
COB
Output Capacitance
cre
Feedback Frequency
IE= 0 ; VCB= 5V; f= 1MHz
IE= 0 ; VCB= 5V; f= 1MHz
0.7
pF
0.6
pF
NF
Noise Figure
lc=5mA;VcE=8V;f=1GHz
1.9
dB
NF
Noise Figure
lc= 5mA ; VCE= 8V; f= 2GHz
3
dB
400
Ptot
(mW)
.300
200
100
\
\0
50
100
150 T^C) 200
Power derating curve"
VOE=5V:T| =
40
10
20 tc fnlA) 30
DC current gain as a function of
col lector current