BFR93A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
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FAX: [phone]
BFR93A
DESCRIPTION
• High Power Gain
• High Current Gain Bandwidth Product
• Low Noise Figure
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SOT- 2 3 package
APPLICATIONS
• Designed for use in RF wideband amplifiers and oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
2
V
!c
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
35
mA
0.3
W
175
'C
-65-150
•c
HiM
III
T
T l ^{1: Base}
Marking a c _{-; Emitter}
11
U
U _i ^{3: Collector}
kcN
/
'*
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L₌^M_*=
mm
DIM
MfN
MAX
A
0. :-
0.51
B
1. IS
:. :o
'i_
2, ID
:. 50
D
0.39
: . 05
C-
1. 7S
:. 05
K
2.65
3. 05
K
1. 10
:. 30
L
0. '.c
0. cl
J!
0. 076
o. :'B
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