BFR106 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Silicon NPN RF Transistor
BFR106
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc= 1mA; IB= 0
15
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
100 n A
ICBO
Collector Cutoff Current
VCB=10V;IE=0
0.1
uA
IEBO
Emitter Cutoff Current
VEB= 2V; lc= 0
10
uA
HFE
DC Current Gain
lc= 70mA ; VCE= 8V
40
220
fr
Current-Gain—Bandwidth Product
COB
Output Capacitance
lc= 70mA ; VCE= 8V; f= 500MHz 3.5
5
GHz
|E=0;VCB=10V;f=1MHz
0.95
1.5
PF
PG
Power Gain
lc= 70mA ; VCE= 8V; f= 900MHz
12.5
dB
PG
Power Gain
lc= 70mA ; VCE= 8V; f= 1 .8GHz
7.5
dB
I S21e 1 2 ^{Insertion Power Gain}
I S21e 1 2 ^{Insertion Power Gain}
NF
Noise Figure
lc= 70mA ; VCE= 8V; f= 900MHz
10.5
dB
lc= 70mA ; VCE= 8V; f= 1 ,8GHz
5
dB
lc= 20mA ; VCE= 8V; f= 900MHz
2.5
dB
NF
Noise Figure
lc= 20mA ; VCE= 8V; f= 1 .8GHz
4
dB