BFR106 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

, Unc.
LS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
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BFR106
DESCRIPTION
• Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz
• High Gain
I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz
APPLICATIONS
• Designed for use in low noise .high-gain amplifiers and
linear broadband amplifiers.
SOT-23 package
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ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCES
Collector-Emitter Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
H |h*
7T - i l l
1 :Base
Marking 3 C _{2: Emitter}
L_Jrjq ^{U 1 j U - ii 3; Collector}
/
L^{_j— T^j-}
\p
r-i)
I 1 _^'J
k*•U
M
I
VEBO
Emitter-Base Voltage
lc
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
3
V
100
mA
12
mA
0.7
W
150
"C
-65-150 •c
mm
DIM
WIN
MAX
A
0,37
0. 51
B
1.19
1. 50
C
2, 10
2. 50
D
0,39
1.05
r.
1.78
2.05
H
2.65
3, 05
K
1. 10
1.30
L
0. -!.5
0,61
M
0.076 0, 17S
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