BFQ591 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

Silicon NPN RF Transistor
BFQ591
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)C£S Collector-Emitter Breakdown Voltage lc=0.1mA;lB=0
15
V
V(BR)CBO ^{Collector-Base Breakdown Voltage}
lc= 0.1mA; IE= 0
20
V
V(BR)EBO Emitter-Base Breakdown Voltage
lE=0.1mA;lc=0
3
V
ICBO
Collector Cutoff Current
VCB=10V; IE=0
0.1
uA
hFE
DC Current Gain
lc= 70mA ; VCE= 8V
60
250
fT
Current-Gain—Bandwidth Product
lc= 70mA ; VCE= 12V; f= 1GHz
7
GHz
PG
Power Gain
lc= 70mA;VCE= 12V; f= 900MHz
11
dB
PG
Power Gain
lc= 70mA;VCE= 12V; f= 2GHz
5.5
dB
Cre
Feedback Capacitance
I S21e I 2 ^{Insertion Power Gain}
Vo
Output Voltage
lE=0;VCB=12V;f=1MHz
lc= 70mA ; VCE= 12V; f= 1GHz
note
0.8
PF
10
dB
700
mV
Note; dim = 60 dB (DIN45004B); VP = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured @ f(p+q+r) = 793.25 MHz.
3 , 1 1 1 1——, 1 1 1
250
VOE = 12 V
'tot
200
150
100
50
50
100
150 .,..,.200
Power derating curve sl "J
1C-2
10-'
1
10 ,
102
lc imAj
DC current gain as a function of collector
current: typical values