BFQ591 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN 7 GHz wideband transistor

<3£.ml-(-on.au.ckoi U-^i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BFQ591
DESCRIPTION
• High Power Gain
• High Current Gain Bandwidth Product
• Low Noise Figure
SOT-89 package
1: Base
2: Emitter
3: Collector
APPLICATIONS
D:
• Designed for use in MATV or CATV amplifiers and RF
communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
20
V
Vceo ^{Collector-Emitter Voltage}
15
V
VEBO Emitter-Base Voltage
3
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
200
mA
2.25
W
175
'C
Tstg ^{Storage Temperature Range}
-65-150
'C
" _{L= CJ}
mm
DIM
MIN
MAX
A
i. ;o
1.60
b
0. 32
0,52
b: 0.36
0,56
C
0,35
0. 11
D i. ;o ;. is
D: i. ;o
1.80
E
:. so
2,60
E:
3.9:
;, 2c
e
L cOtyp
el
2.90 3. :o
L
0.90 1. 10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors