BDY92 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

Silicon NPN Power Transistor
BDY92
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VcEO(SUS)
Collector-Emitter Sustaining Voltage lc=100mA;lB=0
80
V
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage lc= 5A; IB= 0.5A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage} |C=10A;IB= 1A
VeEfsatH
Base-Emitter Saturation Voltage
lc= 5A; IB= 0.5A
VeE(sat)-2 ^{Base-Emitter Saturation Voltage}
IC=10A;IB=1A
ICBO
Collector Cutoff Current
Icev
Collector Cutoff Current
IEBO
Emitter Cutoff current
VCB=80V; IE=0
VCE=80V;VBE=-1.5V
VCE=80V;VBE=-1 .5V;TC=1 50'C
VEB=6V; lc=0
0.5
V
1.0
V
1.2
V
1.5
V
1.0 mA
1.0
3.0
mA
1.0 mA
hpE-1
DC Current Gain
lc=1A;VCE=2V
30
hFE-2
DC Current Gain
lc= 5A ; VCE= 5V
30
120
hpE-3
DC Current Gain
lc=10A;VCE=5V
20
fr
Current-Gain—Bandwidth Product
lc= 0.5 A;VCE= 5V;ftest = 5MHz
70
MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
lc= 5A; |BI= -IB2= 0.5A,
VCC=30V
0.35
vs
1.3
us
0.2
us