BDY92 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3

J.E.I±£U ^zmi-L-onaLictoi Lpioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
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BDY92
DESCRIPTION
• High DC Current Gain-
: hFE=30-120@lc=5A
• Excellent Safe Operating Area
• High Current Capability
APPLICATIONS
• Designed for use in switching-control amplifiers, power
gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80
V
VCEV Collector-Emitter Voltage VBE= -1.5V
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
10
A
I CM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=S25'C
Tj
Junction Temperature
2
A
60
W
175
°C
Tstg
Storage Temperature Range
-65-175 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX
2.5
UNIT
r/w
PIN t.BASE
2.B«IITTER
3. COLLECTOR (CAS^)
TO-3 package
f
1
<
i
c
iinn
DIM MIN UAX
A
3900
B 25.30 26.67
C
7.90 8.30
D
0.90 1.10
£
I 40 1.60
Q
10.92
H
5.46
K 11.40 13.50
L 1675 17.05
N 19.40 19.62
Q
4.00 4.20
U 30.00 ³⁰⁷⁰
V
4.30 450
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notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
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