BDY91 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
BDY91
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VcEO(SUS) ^{Collector-Emitter Sustaining Voltage} lc= 100mA ;IB=0
80
V
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage lc= 5A; IB= 0.5A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage lc= 10A; IB= 1A}
VBE(sat)-1 ^{Base-Emitter Saturation Voltage}
lc= 5A; IB= 0.5A
VBE(sat)-2 ^{Base-Emitter Saturation Voltage}
lc= 10A; IB= 1A
IGBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff current
VCB=100V; IE=0
VCE=100V;VBE=-1.5V
VCE=1 OOV;VBE=-1.5V;TC=150 °C
VEB=6V; lc=0
0.5
V
1.5
V
1.2
V
1.5
V
1.0 mA
1.0
3.0
mA
1.0 mA
hpE-1
DC Current Gain
|C=1A;VCE=2V
35
hpE-2
DC Current Gain
lc=5A;VCE=5V
30
120
hpE-3
DC Current Gain
IC=10A; VCE=5V
20
fr
Current-Gain—Bandwidth Product lc=0.5A;VCE=5V;ftest=5MHz
70
MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC=5A;IB1=-IB2=0.5A,
VCG=30V
0.35 u s
1.3
11 S
0.2
us