BDY91 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

<^7V
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDY91
DESCRIPTION
• High DC Current Gain-
: hFE=30-120@lc=5A
• Excellent Safe Operating Area
• High Current Capability
APPLICATIONS
• Designed for use in switching-control amplifiers, power
gates,switch ing regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
100
V
VCEV ^{Collector-Emitter Voltage VBE= -1.5V}
100
V
VCEO ^{Collector-Emitter Voltage}
80
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
10
A
I CM Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@Tcs£25'C
Tj
Junction Temperature
2
A
60
W
175
°C
Tstg ^{Storage Temperature Range}
-65-175 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
P-th j-c ^{Thermal Resistance.Junction to Case}
MAX
2.5
UNIT
°c/w
PIN LEASE
2. ailTTER
3. COLLECTOR (CASE)
TO-3 package
IIHI1
on* MM MAX
A_e
3900
25.30 2567
C
790 8.30
D 09C 1.10
E
140 1.60
__fi_
1092
H
5.4$
K 11.40 1350
L 1675 17.05
N 19.40 19S2
g
4.00 4.20
u 30.00 ³⁰²⁰
v
4,30 450
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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