BDY83 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-100mA;lB=0
V(BR)CBO Collector-Base Breakdown Voltage lc=~10mA; !E= 0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=-10mA;lc=0
VcE(sat) ^{Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A}
VBE(OP) ^{Base-Emitter On Voltage}
lc= -0.5A; VCE= -5V
ICEO
Collector Cutoff Current
VCE= -20V; IB= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE-i
DC Current Gain
lc= -0.5A; VCE= -5V
hFE-2
DC Current Gain
lc= -2.5A; VCE= -5V
fr
Current Gain-Bandwidth Product
lc=-0.5A;VCE=-10V
hpE-1 Classifications
A
B
C
40-80 70-140 120-240
BDY83
MIN TYP. MAX UNIT
-50
V
-50
V
-10
V
-1.5
V
-0.9
V
-10 mA
-0.2 mA
-0.1 mA
40
240
10
3
MHz