BDY83 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

I
Cx
ij
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDY83
DESCRIPTION
• uommuous ^onecior uurrem-ic—trt
• Collector Power Dissipation-
: Pc= 36W @TC= 25°C
• Complement to Type BDY81
APPLICATIONS
• Designed for general purpose switching and amplifier
applications.
i <-> -
f
123
3
PIN 1 BASE
1. COLLECTOR
3. EMITTER
TO-220C package
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
-50
V
VCEX
Collector-Emitter Voltage VBE= +1 .5V
-50
V
VCEO ^{Collector-Emitter Voltage}
-50
V
VEBO
Emitter-Base Voltage
-10
V
Ic
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@Tc=25°C
36
W
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-55-175 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c ^{Thermal Resistance.Junction to Case}
MAX UNIT
3.5 "CM/
»-~B-" •>
I
/- r
UfJiHjft
A
-*• _•*-S
_v
f
v>oeV
-» - «•_-L
V _{ii V*}
ii* K
1
0
, H ^*
_
G [*-
•I*-J
c
I
mm
DIIV WIN MAX
A 15.70 15.90
B 9.90 10.10
r 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
a 2.70 2.90
R 2.50 2.70
S 1.29 1.31
u _6.45 6.65
V 8.66 8.86
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notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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