BDY71 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0
VcER(SUS) Collector-Emitter Sustaining Voltage lc=100mA;RBE=100a
V(BR)EBO Emitter-Base Breakdown Voltage
|E=1mA;|c=0
VcE(sat) ^{Collector-Emitter Saturation Voltage lc= 0.5A; IB= 50mA}
VeE(on) ^{Base-Emitter On Voltage}
lc= 0.5A; Vce= 4V
ICEO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB= 0
VCE= 90V; VBE(off)= 1.5V
VCE= 30V; VBE(oH,= 1.5V,TC=150°C
VEB= 7V; lc= 0
hFE
DC Current Gain
lc= 0.5A ; VCE= 4V
fr
Current Gain-Bandwidth Product
lc=0.2A;VCE=10V
BDY71
MIN MAX UNIT
55
V
60
V
7
V
1.0
V
1.7
V
0.5
mA
1.0
5.0
mA
1.0
mA
80
200
0.8
MHz