BDY71 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device

/
, Lrnc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
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FAX: [phone]
BDY71
DESCRIPTION
• Continuous Collector Current-lc= 4A
• Collector Power Dissipation-
: Pc= 29W @TC= 25 °C
APPLICATIONS
• Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEX
Collector-Emitter Voltage VSe= -1 .5V
90
V
VCER
Collector-Emitter Voltage RBE= 100Q
60
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@Tc=25°C
29
W
Tj
Junction Temperature
200
•c
Tstg
Storage Temperature
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c
Thermal Resistance.Junction to Case
MAX UNIT
6.0 •c/w
PIN 1.BASE
1. B/I1TTER
3. COLLECTOR (CASE)
TO-66 package
-A
-N-1
'
'
t-
nun
DIM INI MAX
A 3.1!.40 31^0
c^{B 1730 jjt7,70_}
6.70
7.10
D 0,70 L0.90
E 1.40 t 1.60
0
5.08
H
2i4
K _9.30 10,20
L 14.70 14.90
N 12^«0 12.60
Q ^1.60 3^0
U ^{24JO 24,50}
V
Jjid
3.70
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