BDY57 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

Silicon NPN Power Transistor
BDY57
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA; IB=0
80
V
V(BR)CBO Collector- Base Breakdown Voltage lc= 5mA ; IE= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ; lc= 0
10
V
VcE(sat) ^{Collector-Emitter Saturation Voltage IC=10A;IB=1A}
ICBO
Collector Cutoff Current
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB=120V;I£=0
VCE=80V;RBE=10Q
VCE= 80V; RBE= 1 0 Q ; Tc=1 OO'C
VEB=10V;IC=0
1.4
V
0.5
mA
0.5
10
mA
0.5 mA
hpE-1
DC Current Gain
lc=10A; VCE=4V
20
80
hFE-2
DC Current Gain
lc= 20A ; VCE= 4V
15
ft
Current-Gain—Bandwidth Product lc=1A; VCE=1 5V; f= 10MHz
10
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
lc=15A, IB=1.5A,
IC=15A,IB1 = -IB2=1.5A
1.0
us
2.0
us