BDY57 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDY57
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= SOV(Min)
• High Power Dissipation
• Low Collector Saturation Voltage
APPLICATIONS
• LF signal power amplification.
• High current fast switching
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base Voltage
120
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
10
V
Ic
Collector Current-Continuous
25
A
IB
Base Current-Continuous
6
A
PC
Tj
Junction Temperature
175
W
200
•c
Tstg
Storage Temperature Range
-65-200 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance.Junction to Case}
MAX UNIT
1.0 'CM/
3
I
1[
^S
2
PIN
1.BASE
I. BETTER
3.COLLECTUR(CASE)
TO-3 package
r-N^)
i t ^{iz i c}
•LK _-*IU^-D?PL
-— U —*
^—J* X^K"UV\ / ti
<|^5--% ^{G B}
P* \^_^s' ~1 i
M^FI
DM
A
B
C
D
£
Q
H
)(
l
N
'o
U
rV
nun
MM I I\Ux
39JOO
2530 26 Kf
7.80 8. 30
0.90 t 10
1 .40 t 6J0
1032
546
11.40 13 50
16.75 ir 05
1940 19 62
400 4 20
'jfiffi 30 20
430 4 SO
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time oFgoing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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