BDY53 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

Silicon NPN Power Transistors
BDY53
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0
60
V
VcE(sat)-i ^{Collector-Emitter Saturation Voltage lc= 4A; IB= 0.4A}
VcE(sat)-2 ^{Collector-Emitter Saturation Voltage IC=7A;IB=1.4A}
VeE(sat)-i ^{Base-Emitter Saturation Voltage}
lc= 4A; IB= 0.4A
VsE(sat)-2 ^{Base-Emitter SaturationVoltage}
lc=7A; IB=1.4A
ICEX
Collector Cutoff Current
VCE= 100V;VBE=-1.5V,TC=150°C
1.1
V
2.2
V
2.0
V
2.5
V
15
mA
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VEB= TV; lc= 0
lc=2A;VCE=1.5V
3.0 mA
20
fr
Current Gain-Bandwidth Product
lc= 0.5A; VCE= 4V; f=10MHz
20
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
lc= 5A; IB= 1A
IC=5A;IB1=1A;IB2=-0.5A
0.3
vs
1.8
US