BDY53 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTORS DIFFUSED MESA

'Iziisu ^^mi-Conductor ^Products., (inc.
CX
tj
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDY53
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)=60V(Min.)
• Collector-Emitter Saturation Voltage-
:VCE(sa.)=1-1V(Max)@lc = 4A
• High Switching Speed
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
12
A
IB
Base Current
5
A
PC
Collector Power Dissipation@Tc=25°C
60
W
Tj
Junction Temperature
200
•c
Tstg
Storage Temperature
-65-200 -c
V* ^
J
*
H
s
3
PIN
1.BASE
2. BillTTER
3. COLLECT OR (CASE)
2
TO-3 package
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t
i
_J
'
tE
I
:^C
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t
s ^{^Trtj -^}
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B
I
"Vs^l,
H33
mm
DM IUN MAX
A
3900
B 25 .30 26A7
C
7 ^{.30 8.30}
D fl 90 1 10
£ 1 40 1 .60
6
10.92
H
5.46
K 11 .40 1350
L It>7S iros
N 1<)40 1962
J3 ' ^{100 420}
U a1X10 3020
V
'130 450
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