BDY46 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO ^{Collector-Emitter Breakdown Voltage} lc= 200mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc=1mA;lE=0
V(BR)EBO ^{Emitter-Base Breakdown Voltage}
IE= 2mA; lc= 0
VcE(sat)
Collector-Emitter Saturation Voltage lc= 15A; IB= 5A
VeE(sat)
Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hF6-1
DC Current Gain
lc= 15A; la= 5A
VCB= 600V; IE= 0
VCB= 600V; IE= 0, T0=150'C
lc= 2A; VCE= 2V
hFE-2
DC Current Gain
fy
Current Gain-Bandwidth Product
lc=10A;VCE=2V
lc=0.5A; VCE=10V
Switching times
ton
Turn-on Time
tf
Fall Time
W
Turn-off Time
|C=5A;IB1=-IB2=1A
BDY46
MIN MAX UNIT
300
V
600
V
7
V
1.5
V
2.0
V
0.2
2.5
mA
20
5
10
MHz
0.5
ns
1.0 us
3.5 us