BDY46 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon NPN Power Transistor
TELEPHONE: [phone]
[phone]
BDY46
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 300V(Min.)
• DC Current Gain-
: hFE=20(Min.)@lc = 2A
• Collector-Emitter Saturation Voltage-
:VCE<sat)=1.5V(Max)@lc =
APPLICATIONS
• Voltage regulator
• Inverter
• Switching mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
3
PIN
1.BASE
^s
2.HUIITTER
r*
3. COLLECTOR (CASE)
TO-3 package
VCBO
VCES
VCEO
VEBO
Ic
ICM
IB
PC
Tj
Tstg
Collector-Base Voltage
600
V
Collector-Emitter Voltage
600
V
Collector-Emitter Voltage
300
V
Emitter-Base Voltage
7
V
Collector Current-Continuous
15
A
Collector Current-Peak
17
A
Base Current
5
A
Collector Power Dissipation@Tc=S45"C
95
W
Junction Temperature
175
•c
Storage Temperature
-65-175 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance,Junction to Case}
MAX UNIT
1 .37 •c/w
ii j"*1
r
t-E
J.
A^{£*&—-^ $•—3—«}9 ? S. L
i /tl
G
t t i \^J lf^f ^{^ T}
M^a
inni
am MM MAX
A
39 00
B 25.30 26.67
_£_ 7.80 83fl
D 090 1 10
£ 140
0
10 92
H
S 46
K ™« 13.50
L 1675 iros
H 19.40 19.S2
g 400 4,20
U 3000 ³⁰²⁰
V
430 450
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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