BDX68 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

BDX68
BDX68A
BDX68B
BDX68C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated)
Parameter
ICBO
Collector Cut-off Current
'CEO
'EBO
Collector Cut-off Current
Emitter Cut-off Current
hFE.
D.C, Current Gain
VBE-
vCEsat*
Base - Emitter Voltage
Collector - Emitter
Saturation Voltage
Cc
Collector Capacitance
fhfe
Cut-off Frequency
I hfe|
Small Signal Current Gain
Vp
Diode, Forward Voltage
ton
Turn-on Time
toff
Turn-off Time
* Pulse Test: tp < 300us, 8 < 2%
Test Conditions
IE = 0
IE = 0
VCB = VCBOmax
VCB = VSVrjBOmax
Tj = 200°C
IB = 0
lc = 0
IC = _5A
IC = -20A
lc = -3QA
IC = -20A
VCE = J4VCEOmax
VEB = -5V
VCE = -3V
VCE = -3V
VCE = -3V
VCE = -3V
lc = -20A
IB = -80mA
iE = ie = o
f=1MHz
IC = ~10A
IC = -10A
f=1MHz
IF = 20A
'Con=-20A
VCB = -iov
VCE = -3V
VCE =-3V
'Bon = -(Boff = -80mA
Min.
1000
Typ. Max.
2
10
Units
mA
6
mA
10
mA
3000
—
1000
2.5
V
2
V
600
PF
60
kHz
20
—
2
V
1
US
3.5