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BDX68 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor
^£.m.i-Conaa<2toi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MECHANICAL DATA
Dimensions in mm
26.6 max.
j.O max
2.5
PNP
DARLINGTON
POWER
TRANSISTOR
BDX68
BDX68A
BDX68B
BDX68C
PNP Darlington transistors for audio
output stages and general amplifier
and switching applications.
10.9
12.8
TO3 Package.
Case is collector.
NPN complements are:
BDX69, BDX69A, BDX69B, BDX69C.
ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
(Tease = 25°C unless otherwise stated]
Collector - Base Voltage (Open Emitter)
Collector - Emitter Voltage (Open Base)
BOX
68
-60V
-60V
BOX BOX BOX
68A 68B 68C
-80V -100V -120V
-80V -100V -120V
VEBO
'c
Emitter - Base Voltage (Open Collector)
Collector Current
-5V -5V
^L
-25A
-5V,
'CM
Collector Current (Peak)
-40A
IB
Base Current
-500mA
Ptot
Total Power Dissipation at Tcase= 25°C
200W
L
Maximum Junction Temperature
200°C
TSTG
Storage Junction Temperature
-65 to 200°C
R0J-MB
Thermal Resistance, Junction to Mounting Base.
0.875°C / W
N.I .Serni-Ctmdudors reserves the right lo change lest conditions, parameter limit* and package dimensions without notice
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