BDW47 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

BDW42* - NPN, BDW46, BDW47* - PNP
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(lc = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 1 00 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, lc = 0)
BDW46
BDW42/BDW47
BDW46
BDW42/BDW47
BDW46
BDW42/BDW47
ON CHARACTERISTICS(Note 1)
DC Current Gain
(lc = 5.0 Adc, VCE = 4.0 Vdc)
(lc = 10 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage
(lc = 5.0Adc, IB = 10 mAdc)
(lc = 10 Adc, IB = 50 mAdc)
Base-Emitter On Voltage
(lc = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
BDW46/BDW47
VCE = 28.4 Vdc
VCE = 40 Vdc
VCE = 22.5 Vdc
VCE = 36 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(lc = 3.0 Adc,VCE = 3.0 Vdc, f = 1 .0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
BDW42
BDW46/BDW47
Small-Signal Current Gain
(lc = 3.0 Adc,VCE= 3.0 Vdc, f = 1 .0 kHz)
1. Pulse Test: Pulse Width = 300 jis, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
Symbol
VCEO(SUS)
'CEO
ICBO
'EBO
hFE
VCE(sat)
VBE(on)
Is/b
fT
Cob
hfe
Min
80
100
:
:
"
1000
250
-
-
-
3.0
1.2
3.8
1.2
4.0
-
300
Max
Unit
Vdc
-
mAdc
2.0
2.0
mAdc
1.0
1.0
2.0
mAdc
-
-
Vdc
2.0
3.0
3.0
Vdc
Adc
-
~
MHz
PF
200
300
™