BDW47 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

eur
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
US A
BDW42* - NPN, BDW46,
BDW47* - PNP
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Darlington Complementary
Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
• High DCCurrent Gain - hFE = 2500 (typ) @ Ic = 5.0Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(SUS) = 80 Vdc (mm) - BDW46
100 Vdc (min.) - BDW42/BDW47
• LowCollector Emitter Saturation Voltage
VcE(sat) = 2.0 Vdc (max) @ Ic = 5.0 Adc
3.0 Vdc (max) r§ Ic = 10.0 Adc
• Monolithic Construction with Built-in Base Emitter Shunt resistors
• TO-220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
VCEO
Vdc
BDW46
80
BDW42, BDW47
100
Collector-Base Voltage
VCB
Vdc
BDW46
80
BDW42, BDW47
100
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ Tc = 25 C
Derate above 25°C
VEB
5.0
Vdc
Ic
15
Adc
IB
0.5
Adc
PD
85
W
0.68
W/°C
Operating and Storage Junction
Temperature Range
TJ. Tstg
-55 to
"C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Symbol Max
R8JC
1.47
Unit
C/W
15 A DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 V, 85 W
TO-220AB
MARKING
DIAGRAM
o
BDWxx
YYWW
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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