BDV65 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDV65
60
Collector-emitter
(BR)CEO breakc|oWn voltage
lc= 30mA
IB = 0
BDV65A
80
(see Note 4)
BDV65B
100
BDV65C
120
VCB= 30V
IB = 0
BDV65
2
Collector-emitter
VCB= 40V
IB = 0
BDV65A
2
ceo cut-off current
VCB= 50V
IB = 0
BDV65B
2
VCB = 60 V IB = 0
BDV65C
2
VCB= 60V
IE = 0
BDV65
0.4
VCB= 80V
IE = 0
BDV65A
0.4
VCB=100V
IE = 0
BDV65B
0.4
Collector cut-off
VCB = 120V IE = °
BDV65C
0.4
CBO current
VCB= 30V
IE = 0
TC = 150°C
BDV65
2
VCE = 40V
IE = 0
TC = 150°C
BDV65A
2
VCB= 50V
IE = 0
^ = 150^
BDV65B
2
VCB= 60V
IE = 0
TC = 150°C
BDV65C
2
Emitter cut-off
EBO current
VEB = 5V
I0.0
5
Forward current
VCE = 4 V
lc = 5 A
(see Notes 4 and 5)
100O
FE transfer ratio
Collector-emitter
CE(sati saturation voltage
IB = 20 mA lc = 5 A
(see Notes 4 and5)
2
Base-emitter
8E voltage
VCE = 4 V
lc = 5 A
(see Notes 4 and 5)
2.5
Parallel diode
VEC _{forward voltage}
IE = 10 A |B = °
(see Notes 4 and 5)
3.5
NOTES: 4. These parameters must be measured using pulse techniques, tj, = 300 us, duty cycle < 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
ReJC
ReJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1 °c/w
35.7 °c/w