BDV65 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
• Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
• 125 W at 25°C Case Temperature
• 12 A Continuous Collector Current
• Minimum hFE of 1000 at 4 V, 5 A
SOT-9C PACKAGE
(TO PVIEW)
BC
1
CC
* o ^y~~
O
bC
3
Pin 2 is in electrical contact with the mounting base
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (Ig = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
NOTES; 1. This value applies for Ip < 0.1 ms. duty cycle < 10%
2. Derate linearly to 150"C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
Ic
'CM
IB
Plot
Pto.
Tj
Tstg
TL
VALUE
60
80
100
120
60
80
100
120
5
12
15
0,5
125
3.5
-65 to +150
-65 to +1 50
260
UNIT
V
V
V
A
A
A
W
W
°C
°c
°c
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notice information furnished by NJ Semi-Conducton is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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