BDT62 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistors

Silicon PNP Darlington Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT62
Collector-Emitter
VIBRJCEO _{Breakdown Voltage}
BDT62A
BDT62B
i_— orim A- u— n
BDT62C
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage |C=-3A; !B=-12mA}
VcE(sat}-2 ^{Collector-Emitter Saturation Voltage lc= -8A; IB= -80mA}
VsE(on)
ICBO
Base-Emitter On Voltage
BDT62
Collector
Cutoff Current
BDT62A
BDT62B
BDT62C
BDT62
lc= -3A; VCE= -3V
VCB= -60V; IE= 0
VcB=-30V; lE=0;Tj=150'C
VCB= -80V; IE= 0
Vce=-40V; lE=0;Tj=150"C
VCB=-100V;IE=0
VCB=-50V; lE=0;Tj=150C
VCB=-120V;IE=0
VCB=-60V;le=0;Tj=150'C
VCE= -30V; IB= 0
Collector
ICED
Cutoff Current
BDT62A VCE= -40V; IB= 0
BDT62B VCE= -50V; IB= 0
BDT62C VCE= -60V; IB= 0
IEBO
hpE-1
hFE-2
Emitter Cutoff Current
DC Current Gain
DC Current Gain
VEB= -5V; lc= 0
lc= -3A; VCE= -3V
lc=-10A; VCE=-3V
VECF
C-E Diode Forward Voltage
IE= -3A
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
i — -3A |n<- loo— 19mA
BDT62/A/B/C
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2.0
V
-2.5 V
-2.5
V
-0.2
-2.0
-0.2
-2.0
mA
-0.2
-2.0
-0.2
-2.0
-0.5
-0.5
mA
-0.5
-0.5
-5 mA
1000
200
-2.0
V
0.5
MS
2.5
MS