BDT62 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistors

<Se.mi-(2ondiicto^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
BDT62/A/B/C
DESCRIPTION
• DC Current Gain -hFe = 1000(Min)@ lc= -3A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT62; -SOV(Min)- BDT62A; •
-1 OOV(Min)- BDT62B; -120V(Min)- BDT62C
• Complement to Type BDT63/A/B/C
APPLICATIONS
• Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
BDT62
-60
VCBO
Collector-Base
Voltage
BDT62A
BDT62B
-80
-100
BDT62C
-120
BDT62
-60
VCEO
Collector-Emitter
Voltage
BDT62A
BDT62B
-80
-100
BDT62C
-120
VEBO ^{Emitter-Base Voltage}
-5
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current
Collector Power Dissipation
PC
TC=25"C
T,
Junction Temperature
-10
-15
-0.25
90
150
Tstg
Storage Ttemperature Range
-65-150
UNIT
V
V
V
A
A
A
W
C
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c
Rthj-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
.. -
Quality Semi-Conductors
MAX
1.39
70
UNIT
c/w
c/w
2
PIN 1.BASE
2. COLLECTOR
S.a/IITTER
TO-220C package
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AT
to _{* S}
-,,;,
1 >i !.•-;• -
ia _L
* _!'liK
![
I \i
D
1
V1
H c^-' 1L
•, ff.
.
*•-* j
H^-
C
T~
CUM
A
B
'I
D
F
0
h
j
K
L
0
R
S
U
V
J
mm
MIN
15.70
9.90
MAX
15.90
10.10
4.20
0.70
3.40
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
4.40
0.90
3.GO
5.18
2.00
0.40
13.40
1.30
2.90
2.70
1.31
6.65
8.86